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 SBAS16
High-Speed Elektronische Bauelemente
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
Switching Diode
Description
* The SBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits. * The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount package.
S
2
A L
3 Top View
SC-59 Dim A
B
Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40
Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80
B C D G H
J K
1
D G C H
J K L S
Marking
All Dimension in mm
A6-
Absolute Maximum Ratings at TA = 25 C
o
Parameter
Reverse Voltage Repetitive Reverse Voltage Forward Current Repetitive Forward Current Forward Surge Current (1ms) Total Power Dissipation Operating Junction and Storage Temperature Range
Symbol
VR VRR IF IFR IFSM PD Tj, Tstg
Ratings
75
85 250 500 1000 200 -65~+150
Unit
V V mA mA mW mW
o
C
Characteristics
Characteristic
at TA = 25 :
Symbol V(BR) VF(1) VF(2) VF(3) VF(4) IR CT Trr Min. 75 Max. 715 855 1000 1250 1 2 6 Unit V mV mV mV mV uA pF nS IR=100uA IF=1mA IF=10mA IF=50mA IF=150mA VR=75V VR=0, f=1MHz IF=IR=10mA, RL=100 L measured at IR=1mA Test Conditions
Reverse Breakdown Voltage
Forward Voltage
Reverse Current Total Capacitance Reverse Recovery Time
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
SBAS16
High-Speed Elektronische Bauelemente
Switching Diode
Characteristics Curve
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 2


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